Branin80

@Article{Branin:ieeect:1973,

author = "F. H. {Branin Jr.}",

title = "Network Sensitivity and Noise Analysis Simplified",

journal = {IEEE Trans. Circuit Theory},

volume = "CT-20",

number = "3",

pages = "285--288",

month = may,

keywords = "math simulation noise sensitivity",

year = "1973",

}

@Article{Bonani:ieeeted:1998,

author = "F. Bonani and G. Ghione and M. R. Pinto and R. K.

Smith",

title = "An Efficient Approach to Noise Analysis Through

Multidimensional Physics-Based Models",

journal = {IEEE Trans. Electron Devices},

volume = "45",

number = "1",

pages = "261--269",

month = jan,

keywords = "Bipolar semiconductor devices Computer simulation

Perturbation techniques Green's function Semiconductor

device models Spurious signal noise device simulation noise math",

year = "1998",

}

@Article{bank1270142,

author={R. E. Bank and W. M. Coughran and W. Fichtner and E. H. Grosse and D. J. Rose and R. K. Smith},

journal={IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems},

title={Transient Simulation of Silicon Devices and Circuits},

year={1985},

volume={4},

number={4},

pages={436-451},

keywords={Bipolar integrated circuits;Circuit simulation;Data structures;MOSFET circuits;Nonlinear equations;Numerical simulation;Silicon devices;Switching circuits;Very large scale integration;Wires},

doi={10.1109/TCAD.1985.1270142},

ISSN={0278-0070},

month=oct,

}

@Misc{TecplotInfo,

title = {Tecplot - CFD post processing to visualize simulation data},

url = {http://www.tecplot.com}

}

@Misc{VTKInfo,

title = {{VTK} The Visualization Toolkit},

url = {http://www.vtk.org},

}

@InProceedings{Duane:WCM2002,

author = {M. Duane},

title = {The Role of {TCAD} in Compact Modeling},

booktitle = {Technical Proceedings of the 2002 International Conference on Modeling and Simulation of Microsystems},

pages = {719--721},

year = {2002},

}

@book{getreu2009modeling,

title={Modeling the Bipolar Transistor},

author={Getreu, Ian},

year={2009},

publisher={Ian Getreu},

url={http://stores.lulu.com/iangetreu}

}

series={IET circuits, devices and systems series},

@book{armstrong2007tcad,

title={{TCAD} for Si, SiGe and GaAs Integrated Circuits},

author={Armstrong, G.A. and Maiti, C.K. and Institution of Engineering and Technology},

isbn={9780863417436},

year={2007},

publisher={Institution of Engineering and Technology}

}

doi={10.1109/T-ED.1982.20698},

@ARTICLE{aroramobility,

author={Arora, N.D. and Hauser, John R. and Roulston, D.J.},

journal={IEEE Trans. Electron Devices},

title={Electron and hole mobilities in silicon as a function of concentration and temperature},

year={1982},

volume={29},

number={2},

pages={292--295},

keywords={Charge carrier processes;Electron mobility;Helium;Impurities;Lattices;Light scattering;Physics;Silicon;Solid state circuits;Temperature},

ISSN={0018-9383},}

doi={10.1109/PROC.1967.6123},

@Article{caugheythomas,

author={Caughey, D.M. and Thomas, R.E.},

journal={Proc. IEEE},

title={Carrier mobilities in silicon empirically related to doping and field},

year={1967},

volume={55},

number={12},

pages={2192--2193},

keywords={Board of Directors;Charge carrier processes;Conductivity;Conductors;Density measurement;Doping;Electron mobility;Equations;Portable media players;Silicon},

ISSN={0018-9219},}

doi={10.1109/T-ED.1975.18267},

@ARTICLE{canalivsat,

author={Canali, C. and Majni, G. and Minder, R. and Ottaviani, G.},

journal={IEEE Trans. Electron Devices},

title={Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature},

year={1975},

volume={22},

number={11},

pages={1045--1047},

keywords={Charge carrier processes;Electric variables measurement;Electron mobility;Fingers;Irrigation;Performance evaluation;Silicon;Temperature distribution;Time measurement;Velocity measurement},

ISSN={0018-9383},}

@Article{sg:ieeeted:1969,

author = {D. L. Scharfetter and H. K. Gummel},

title = {Large-Signal Analysis of a Silicon {R}ead Diode Oscillator},

journal = {IEEE Trans. Electron Devices},

volume = {ED-16},

number = {1},

pages = {64--77},

month = jan,

year = {1969},

}

, Large-signal analysis of a silicon Read diode oscillator, IEEE Trans. Electron Devices ED-16 (1969) 64--77.

@Article{Levinshtein:ieeeted:2002,

author = {M. E. Levinshtein and T. T. Mnatsakanov},

title = {On The Transport Equations in Popular Commercial Device Simulators},

journal = {IEEE Trans. Electron Devices},

volume = {49},

number = {4},

pages = {702--703},

month = apr,

year = {2002},

}

@Article{Shi:ieeeted:2003,

author = {Yun Shi and Guofu Niu and John D. Cressler and David L. Harame},

title = {On the Consistent Modeling of Band-Gap Narrowing for Accurate Device-Level Simulation of Scaled {SiGe} {HBTs}},

journal = {IEEE Trans. Electron Devices},

volume = {50},

number = {5},

pages = {1370--1377},

month = may,

year = {2003},

}

@InProceedings{Luo:ieeebctm:2007,

author = {Lan Luo and Guofu Niu and John D. Cressler},

title = {Modeling of Bandgap Narrowing for Consistent Simulation of {SiGe} {HBTs} Across a Wide Temperature Range},

booktitle = {Proc. IEEE BCTM},

pages = {123--176},

year = {2007},

}

@Misc{FLOOXSHome,

title = {{FLOOPS}/{FLOODS} Home Page},

url = {http://www.flooxs.tec.ufl.edu},

}

% year = {2009},

http://www-tcad.stanford.edu/~prophet/

@Misc{Prophet,

title = {{PROPHET}},

url = {http://www-tcad.stanford.edu/~prophet},

}

year = {2009},

%defunct

% silvaco apparently uses a c interpreter

@Misc{SilvacoCInterp,

title = {Model Development Using the {C}-{I}nterpreter},

howpublished = {Available: \url{http://www.silvaco.com/products/device\_simulation/atlas.html}},

}

year = {2009},

@Misc{Liu975,

title = {Nano-Scale Device Simulations Using {PROPHET}-{P}art {II}: {PDE} Systems},

month = jan,

url = {http://www.nanohub.org/resources/975/},

year = {2006},

author = {Yang Liu and Robert Dutton}

}

@Book{Rall:1981,

Author = {Louis B. Rall},

Title = {Automatic Differentiation: Techniques and Applications},

Publisher = {Springer},

Address = {NY},

Edition = {1},

Year = {1981}

}

@Book{Muller:1986,

author = {Richard S. Muller and Theodore I. Kamins},

title = {Device Electronics for Integrated Circuits},

publisher = {Wiley},

address = {NY},

edition = {2},

year = {1986},

}

@Misc{Sentaurus:2007,

author = {{Synopsys, Inc.}},

title = {Sentaurus {D}evice {U}ser {G}uide},

year = {2007},

}

@InProceedings{Schenk:ieeesispad:2006,

author = {Andreas Schenk and Pietro P. Altermatt and Bernhard Schmithüsen},

title = {Physical Model of Incomplete Ionization for Silicon Device Simulation},

booktitle = {IEEE SISPAD},

pages = {51--54},

year = {2006},

}

@Article{Dutton:ieeecadics:2000,

author = {Robert W. Dutton and Andrzej J. Strojwas},

title = {Perspectives on Technology and Technology-Driven {CAD}},

journal = {IEEE Trans. Computer-Aided Design Integr. Circuits Syst.},

year = {2000},

volume = {19},

number = {12},

month = dec,

pages = {1544--1560},

}

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 19, NO. 12, DECEMBER 2000

Perspectives on Technology and Technology-Driven

CAD

Robert W. Dutton, Fellow, IEEE, and Andrzej J. Strojwas, Fellow, IEEE

IEEE Transactions on CAD

IEEE Trans. Computer-Aided Design Integr. Circuits Syst.

@Misc{symdiffDownload,

title = {{SYMDIFF}},

howpublished = {Available: \url{http://www.symdiff.org}},

}

@Misc{symdiffManual,

author = {{DEVSIM LLC}},

title = {{SYMDIFF} {U}ser {G}uide},

howpublished = {Available: \url{http://www.symdiff.org}},

}

x@Misc{DevsimDownload,

title = {{DEVSIM}},

howpublished = {Available: \url{http://www.devsim.org}},

}

@Misc{DevsimManual,

author = {{DEVSIM LLC}},

title = {{DEVSIM User Guide}},

howpublished = {Available: \url{http://www.devsim.org}},

}

@Misc{PythonInfo,

title = {{Python}},

howpublished = {Available: http://www.python.org},

}

@Article{Gmsh:2009,

author = {C. Geuzaine and J.-F. Remacle},

title = {Gmsh: a three-dimensional finite element mesh generator with built-in pre- and post-processing facilities},

journal = {International Journal for Numerical Methods in Engineering},

year = {2009},

volume = 79,

pages = {1309--1331}

}

@Article{Ousterhout98scripting:higher,

author = {John K. Ousterhout},

title = {Scripting: Higher level programming for the 21st century},

journal = {IEEE Computer},

year = {1998},

volume = {31},

pages = {23--30}

}

@article{superlu99,

author = {James W. Demmel and Stanley C. Eisenstat and

John R. Gilbert and Xiaoye S. Li and Joseph W. H. Liu},

title = {A supernodal approach to sparse partial pivoting},

journal = {SIAM J. Matrix Analysis and Applications},

year = {1999},

volume = {20},

number = {3},

pages = {720--755}

}

@book{TclBook,

author = {Brent Welch and Ken Jones and Jeffrey Hobbs},

title = {Practical Programming in Tcl and Tk},

edition = {4},

publisher = {Prentice Hall PTR},

year = {2003}

}

@book{Mueller,

author = {Richard S. Muller and Theodore I. Kamins and Mansun Chan},

title = {Device Electronics for Integrated Circuits},

edition = {3},

publisher = {John Wiley \& Sons},

year = {2002}

}

@misc{adiff,

title = {Adiff website},

howpublished = {\url{http://www.adiff.com}}

}

@misc{python,

title = {Python Programming Language –- Official Website},

howpublished = {\url{http://www.python.org}}

}

@misc{visit,

author = {LLNL},

title = {VisIt},

howpublished = {\url{https://wci.llnl.gov/codes/visit}}

}

@misc{cogenda,

author = {Cogenda},

title = {{G}enius {D}evice {S}imulator},

howpublished = {\url{http://www.cogenda.com}}

}

@misc{atlas-hp,

TITLE = {Automatically Tuned Linear Algebra Software~({ATLAS})},

howpublished = {\url{http://math-atlas.sourceforge.net/}}

}

@misc{gplv3,

title = {{GNU} {G}eneral {P}ublic {L}icense {V}ersion 3},

author = {{F}ree {S}oftware {F}oundation},

url = {http://www.gnu.org/licenses/gpl.html},

}

@misc{lgplv3,

title = {{GNU} {L}esser {G}eneral {P}ublic {L}icense {V}ersion 3},

author = {{F}ree {S}oftware {F}oundation},

url = {http://www.gnu.org/licenses/lgpl.html},

}

@misc{apache2,

title = {{A}pache {L}icense, {V}ersion 2.0},

author = {{A}pache {S}oftware {F}oundation},

url = {http://www.apache.org/licenses/LICENSE-2.0.html},

}

@book{Selberherr,

author = {Siegfried Selberherr},

title = {Analysis and simulation of semiconductor devices},

year = {1984},

Publisher = {Springer-Verlag},

Address = {NY},

}

@book{Roache,

author = {Patrick J. Roache},

title = {Fundamentals of Verification and Validation},

year = {2009},

Publisher = {Hermosa},

Address = {NM},

}

@article{Laux:1985,

author = {Laux, Steven E. and Byrnes, Robert G.},

title = {Semiconductor device simulation using generalized mobility models},

journal = {IBM J. Res. Dev.},

issue_date = {May 1985},

volume = {29},

number = {3},

month = may,

year = {1985},

issn = {0018-8646},

pages = {289--301},

numpages = {13},

url = {http://dx.doi.org/10.1147/rd.293.0289},

doi = {10.1147/rd.293.0289},

acmid = {1012099},

publisher = {IBM Corp.},

address = {Riverton, NJ, USA},

}

@ARTICLE{6121944,

author={Wei Yao and Gildenblat, G. and McAndrew, C.C. and Cassagnes, A.},

journal={IEEE Trans. Electron Devices},

title={{SP-HV:} A Scalable Surface-Potential-Based Compact Model for {LDMOS} Transistors},

year={2012},

volume={59},

number={3},

pages={542--550},

keywords={MOSFET;semiconductor device models;technology CAD (electronics);LDMOS transistor;PSP resistor model;R3 resistor model;SP-HV MOS;TCAD simulation;impact ionization current;lateral double-diffused MOS transistor;nonlinear resistor model;quasisaturation current;scalable surface-potential-based compact model;self-heating current;surface-potential-based bulk MOS field-effect transistor model;surface-potential-based high-voltage MOS;technology computer-aided design simulation;Capacitance;Computational modeling;Impact ionization;Integrated circuit modeling;Logic gates;Resistance;Transistors;Compact model;lateral double-diffused metal–oxide–semiconductor (LDMOS);quasi-saturation;self-heating;surface potential},

doi={10.1109/TED.2011.2177092},

ISSN={0018-9383},}

%dissertation

@phdthesis{WettsteinDissertation,

author = "Andres Wettstein",

title = "Quantum Effects in {MOS} Devices",

school = "ETH",

year = "2000",

}

@phdthesis{PintoDissertation,

author = "Mark Richard Pinto",

title = "Comprehensive semiconductor device simulation for silicon ULSI",

school = "Stanford",

year = "1990",

}

@INPROCEEDINGS{871195,

author={McAndrew, C.C.},

booktitle={IEEE SISPAD},

title={Predictive technology characterization, missing links between {TCAD} and compact modeling},

year={2000},

pages={12--17},

keywords={circuit CAD;integrated circuit design;semiconductor process modelling;statistical analysis;technology CAD (electronics);IC manufacturing technologies;TCAD;TCAD deficiencies;TCAD simulation;compact modeling;compact models;coupled technology/circuit development;engineering predictions;extrapolated technology requirements;predictive circuit level technology data;predictive component modeling;predictive simulations;predictive technology characterization;statistical variations;technology capability;Analog integrated circuits;Circuit simulation;Circuit synthesis;Design engineering;Integrated circuit modeling;Integrated circuit synthesis;Manufacturing processes;Predictive models;Signal design;Solid modeling},

doi={10.1109/SISPAD.2000.871195},}

@INPROCEEDINGS{5667961,

author={Steigerwald, J. and Humphries, P.},

booktitle={Proc. IEEE BCTM},

title={{TCAD} assisted reflection on parameter extraction for compact modeling},

year={2010},

pages={245--252},

keywords={bipolar transistors;semiconductor device models;technology CAD (electronics);Spice analysis;TCAD assisted reflection;TCAD simulations;analog device XFCB3 process;base resistance extraction;capacitances;compact modeling;hybrid-p equivalent circuits;parameter extraction;self aligned bipolar transistors;Capacitance;Data mining;Equivalent circuits;Impedance;Integrated circuit modeling;Resistance;Silicon bipolar/BiCMOS process technology;bipolar modeling and simulation;device physics},

doi={10.1109/BIPOL.2010.5667961},

ISSN={1088-9299},}

@InProceedings{wusispad2013,

author={Wu, Jeff and Diaz, C.H.},

title={Expanding role of predictive {TCAD} in advanced technology development},

year={2013},

booktitle={IEEE SISPAD},

pages={167--171},

}

@ARTICLE{GarciaAsenov2011,

author={Garcia-Loureiro, A.J. and Seoane, N. and Aldegunde, M. and Valin, R. and Asenov, A. and Martinez, A. and Kalna, K.},

journal={IEEE Trans. Computer-Aided Design Integr. Circuits Syst.},

title={Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors},

year={2011},

month=jun,

volume={30},

number={6},

pages={841--851},

keywords={Green's function methods;MOSFET;Poisson equation;Schrodinger equation;finite difference methods;finite element analysis;geometry;quantum theory;semiconductor diodes;1D metal-oxide semiconductor diode;3D geometry;3D simulation;Schrodinger-Poisson calculation;atomistic mesh;coarse grid;computational resource;density gradient quantum correction;discretization error;drift-diffusion simulation;finite difference method;finite element method;gate length Tri-Gate fin field-effect transistor;gate length double gate metal-oxide-semiconductor field-effect transistor;multigate nanoscaled transistor;nonequilibrium Green function approach;quantum corrected D-D simulation;second-order differential scheme;size 10 nm;size 40 nm;Computational modeling;Equations;Finite element methods;Logic gates;MOSFET circuits;Mathematical model;Solid modeling;Density-gradient;metal-oxide-semiconductor (MOS) devices;quantum theory;semiconductor device modeling},

doi={10.1109/TCAD.2011.2107990},

ISSN={0278-0070},}

@ARTICLE{WettsteinVLSI2002,

author={Andreas Wettstein and Oleg Penzin and Eugeny Lyumkis},

title={Integration of the Density Gradient Model into a General Purpose Device Simulator},

journal={VLSI Design},

volume={15},

number={4},

pages={751--759},

year={2002},

doi={10.1080/1065514021000012363},

}

@INPROCEEDINGS{Wettstein:sispad:2002,

author={Lyumkis, E. and Mickevicius, R. and Penzin, O. and Polsky, B. and Sayed, K.E. and Wettstein, A. and Fichtner, W.},

booktitle={SISPAD},

title={Simulations of ultrathin, ultrashort double-gated {MOSFETs} with the density gradient transport model},

year={2002},

pages={271--274},

keywords={MOSFET;nanotechnology;semiconductor device models;silicon-on-insulator;2D quantum mechanical effects;density gradient model;drift-diffusion model;highly nonequilibrium conditions;hydrodynamic transport model;nanoscale SOI structures;numerical simulation;ultrashort double-gated MOSFETs;Boundary conditions;Differential equations;FETs;MOSFETs;Modeling;Mutual coupling;Nanostructures;Quantum mechanics;Robustness;Systems engineering and theory},

doi={10.1109/SISPAD.2002.1034570},}

@ARTICLE{Wettstein:ieeeted:2001,

author={Wettstein, A. and Schenk, A. and Fichtner, Wolfgang},

journal={IEEE Trans. Electron Devices},

title={Quantum device-simulation with the density-gradient model on unstructured grids},

year={2001},

month={Feb},

volume={48},

number={2},

pages={279--284},

keywords={MOSFET;semiconductor device models;semiconductor diodes;silicon-on-insulator;MOS-diode;MOSFET;complex geometries;density-gradient device equations;density-gradient model;double-gated SOI MOSFET;internal density distribution;quantum device-simulation;quantum mechanical effects;terminal characteristics;unstructured grids;Geometry;Hydrodynamics;MOSFET circuits;Maxwell equations;Multidimensional systems;Quantum mechanics;Schrodinger equation;Solid modeling;Threshold voltage;Tunneling},

doi={10.1109/16.902727},

ISSN={0018-9383},}

@INPROCEEDINGS{Hohr:sispad:2002,

author={H{\"o}hr, T. and Schenk, A. and Wettstein, A. and Fichtner, W.},

booktitle={SISPAD},

title={On density-gradient modeling of tunneling through insulators},

year={2002},

month={},

pages={275--278},

keywords={MOSFET;resonant tunnelling;resonant tunnelling diodes;semiconductor device models;semiconductor diodes;MOS-diode;MOSFET;RTD;Schrodinger-Bardeen method;density gradient model;double barriers;resonant tunneling;single barriers;thin insulating barriers;tunneling currents;Charge carrier processes;Electronic mail;Insulation;Laboratories;MOSFETs;Modeling;Partial differential equations;Poisson equations;Schrodinger equation;Tunneling},

doi={10.1109/SISPAD.2002.1034571},}

@INPROCEEDINGS{Ancona:sispad:2000,

author={Ancona, M.G. and Biegel, B.A.},

booktitle={SISPAD},

title={Nonlinear discretization scheme for the Density-Gradient equations},

year={2000},

month={},

pages={196--199},

keywords={MOS capacitors;curve fitting;mesh generation;quantum interference devices;quantum interference phenomena;semiconductor device models;tunnelling;MOS capacitors;density-gradient equations;density-gradient theory;electronic devices;engineering-oriented analysis;exponential-fitting scheme;mesh refinement;nonlinear discretization;nonlinear discretization scheme;nonlinear three-point discretization;numerical evaluation;quantum confinement;tunneling;tunneling phenomena;Charge carrier processes;Differential equations;Electrons;Laboratories;NASA;Nonlinear equations;Potential well;Quantum mechanics;Space technology;Tunneling},

doi={10.1109/SISPAD.2000.871241},}

@INPROCEEDINGS{Rafferty:sispad:1998,

author={Rafferty, C.S. and Biegel, B. and Yu, Z. and Ancona, M.G. and Bude, J. and Dutton, R.W.},

booktitle={SISPAD},

title={Multi-dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques},

year={1998},

month={},

pages={137--140},

}

@ARTICLE{jin2004,

author={Jin, Seong-Hoon and Park and Young-June and Min, Hong-Shick},

journal={Journal of Semiconductor Technology and Science},

title={Simulation of Quantum Effects in the Nano-scale Semiconductor Device},

year={2004},

volume={4},

number={1},

pages={32--40},

}